absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -22 i d @ v gs = -12v, t c = 100c continuous drain current -14 i dm pulsed drain current ? -88 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -22 a e ar repetitive avalanche energy ? 1.5 mj dv/dt peak diode recovery dv/dt ? -23 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 11.5 (t ypical ) g pre-irradiation international rectifier? s radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet thru-hole (t0-204ae) 02/18/03 www.irf.com 1 product summary part number radiation level r ds(on) i d irh9150 100k rads (si) 0.075 ? -22a IRH93150 300k rads (si) 0.075 ? -22a for footnotes refer to the last page irh9150 100v, p-channel rad hard ? hexfet ? technology to-204ae features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight pd - 90879c
2 www.irf.com irh9150 pre-irradiation note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -22 i sm pulse source current (body diode) ? ? ? -88 v sd diode forward voltage ? ? -3.0 v t j = 25c, i s = -22a, v gs = 0v ? t rr reverse recovery time ? ? 250 ns t j = 25c, i f = -22a, di/dt -100a/ s q rr reverse recovery charge ? ? 1.5 c v dd -50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.83 r thja junction-to-ambient ? ? 30 c/w typical socket mount r thcs case-to-sink ? 0.12 ? electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.093 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.075 ? v gs = -12v, i d = -14a resistance ? ? 0.080 v gs = -12v, i d = -22a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 11 ? ? s ( )v ds > -15v, i ds = -14a ? i dss zero gate voltage drain current ? ? -25 v ds = -80v ,v gs =0v ? ? -250 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 200 v gs =-12v, i d = -22a q gs gate-to-source charge ? ? 35 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 48 t d (on) turn-on delay time ? ? 40 v dd =-50v, i d = -22a t r rise time ? ? 150 v gs =-12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 100 t f fall time ? ? 190 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 4300 ? v gs = 0v, v ds = -25v c oss output capacitance ? 1100 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 310 ? na ? ? nh ns a
www.irf.com 3 pre-irradiation irh9150 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? ? 0.075 ? 0.085 ? v gs = -12v, i d =-14a on-state resistance v sd diode forward voltage ? ? -3.0 ? -3.0 v v gs = 0v, i s = -22a international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i n o i t e l ) ) 2 m c / g m ( / v e m y g r e n e ) v e m ( e g n a r ) m ( ) v ( s d v v 0 = s g v @v 5 = s g v @v 0 1 = s g v @v 5 1 = s g v @v 0 2 = s g v @ u c8 25 8 23 40 0 1 -0 0 1 -0 0 1 -0 7 -0 6 - r b8 . 6 35 0 39 30 0 1 -0 0 1 -0 7 -0 5 -0 4 - i9 . 9 55 4 38 . 2 30 6 - ????
4 www.irf.com irh9150 pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 5 6 7 8 9 10 v = -50v 20 s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -22a - -
www.irf.com 5 pre-irradiation irh9150 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -22a v = -20v ds v = -50v ds v = -80v ds 1 10 100 0.0 1.0 2.0 3.0 4.0 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds ( on ) sin g le pulse t t = 150 c = 25 c j c -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
6 www.irf.com irh9150 pre-irradiation fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 0 4 8 12 16 20 24 t , case temperature ( c) -i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) + - v ds 90% 10% v gs t d(on) t r t d(off) t f
www.irf.com 7 pre-irradiation irh9150 q g q gs q gd v g charge -12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -9.8a -14a -22a r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs t p v ( br ) dss i as d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
8 www.irf.com irh9150 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = -25v, starting t j = 25c, l=2.06mh peak i l = -22a, v gs =-12v ? i sd -22a, di/dt -450a/ s, v dd -100v, t j 150c foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03 case outline and dimensions ? to-204ae
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